| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a piezoelectric thin-film element which can be greatly improved in piezoelectric characteristic by obtaining a piezoelectric thin film which contains (K, Na)NbO<SB>3</SB>as a main phase and has superior piezoelectric characteristics. <P>SOLUTION: The piezoelectric thin-film element constituted by disposing a lower electrode 2 and a piezoelectric thin film 3 in order on a substrate 1 is characterized in that: the piezoelectric thin film 3 is formed of a dielectric thin film having a perovskite structure containing (K, Na)NbO<SB>3</SB>as a main phase; and an intermediate layer 4 having a pseudo-cubic or cubic perovskite structure of≥4.036Åin lattice constant is inserted between the lower electrode 2 and piezoelectric thin film 3 in contact with the piezoelectric thin film 3. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
