发明名称 STORAGE DEVICE COMPRISING NON-VOLATILE MEMORY DEVICE AND PROGRAMING METHOD THEREOF
摘要 Disclosed are a storage device including a non-volatile memory device and a programming method thereof, capable of overcoming a limitation of an erase program interval (EPI) with respect to the non-volatile memory device. The storage device according to an embodiment of the present invention includes: a non-volatile memory device having non-volatile memory blocks divided into a buffer region and a main region; and a memory controller for controlling the non-volatile memory device to perform a buffer program operation which stores data provided from the outside in the buffer region, a main program operation which stores data provided from the outside in the main region, and a closing program operation which writes the data stored in the buffer region in the main region, wherein the closing program operation is performed with respect to open pages of the memory block including a page lastly programmed in the main program operation.
申请公布号 KR20160063493(A) 申请公布日期 2016.06.07
申请号 KR20140166536 申请日期 2014.11.26
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JANG, HYOUNG SUK;YUN, DUK YOUNG
分类号 G11C16/34;G11C16/06 主分类号 G11C16/34
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