发明名称 ELECTRON IRRADIATION DEVICE
摘要 PROBLEM TO BE SOLVED: To provide an electron irradiation device in which defect and corrosion hardly occur on an irradiation window and capable of reducing an exchange frequency of the irradiation window.SOLUTION: An electron irradiation device 1 includes: an electron generation source 2 capable of generating an electron e; a vacuum chamber 3 installing the electron generation source 2 in an inside part 30; an irradiation window 5 holding airtightness of the vacuum chamber 3 and capable of permeating the electron efrom the electron generation source 2; and cooling means 32, 31o, 31i cooling the irradiation window 5. The irradiation window 5 is formed of a solid wood made of the anticorrosive heat conduction material such as silicon carbide (SiC), and includes: a thin film part 50 permeating the electron e; and a thick film part 51 thicker than this thin film part 50 and having a continuous thickness. The thick film part 51 has an outside thick film part located on a peripheral edge part of the irradiation window 5. The outside thick film part is supported by a wall 31 which constitutes the vacuum chamber 3 and is connected to the cooling means 32, 31o, and 31i.SELECTED DRAWING: Figure 1
申请公布号 JP2016211850(A) 申请公布日期 2016.12.15
申请号 JP20130261924 申请日期 2013.12.19
申请人 HITACHI ZOSEN CORP 发明人 KAVEH BAKHTARI
分类号 G21K5/00;G21K5/04 主分类号 G21K5/00
代理机构 代理人
主权项
地址
您可能感兴趣的专利