| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which can attain improvement in the reliability of copper wiring certainly by restraining interface diffusion of copper. SOLUTION: Wiring trench is formed in a silicon oxide film 20. After a tantalum/tantalum nitride film 22 is formed in the wiring trench, a copper film 24 is formed so that the wiring trench may be embedded. Continuously, wiring 25 is formed by polishing the tantalum/tantalum nitride film 22 and the copper film 24 by using a CMP method. Next, after an aluminum film is formed on the silicon oxide film 20 and the copper film 24, the copper film 24 and the aluminum film are made to react with each other by applying heat treatment, and an alloy film 27 is formed between the copper film 24 and the aluminum film. Continuously, only an aluminum film which is not yet reacted is eliminated by etching by utilizing the difference of etch rate between the alloy film 27 and the aluminum film. COPYRIGHT: (C)2005,JPO&NCIPI
|
