发明名称 POLISHING LIQUID AND POLISHING METHOD OF SUBSTRATE USING THE POLISHING LIQUID
摘要 PROBLEM TO BE SOLVED: To provide a polishing liquid capable of enhancing polishing speed of a film to be polished and enhancing surface flatness after polishing in a CMP technology for flattening the film to be polished such as an interlayer insulation film, a BPSG film and an STI film.SOLUTION: There is provided a polishing liquid containing a polymer compound B having cerium oxide particle, propionic acid, a carboxylic acid group or a carboxylate group and water, and having pKa of propionic acid of less than 9, the content of propionic acid of 0.001 to 1 mass% based on the total mass of the polishing liquid, the content of the polymer compound B of 0.01 to 0.50 mass% based on the total mass of the polishing liquid and pH of 4.0 to 7.0.SELECTED DRAWING: None
申请公布号 JP2016183346(A) 申请公布日期 2016.10.20
申请号 JP20160112798 申请日期 2016.06.06
申请人 HITACHI CHEMICAL CO LTD 发明人 OTA MUNEHIRO;TANAKA TAKAAKI;TAKIZAWA HISAO;YOSHIKAWA SHIGERU;MATSUMOTO TAKAAKI;YOSHIKAWA TAKAHIRO;SHINODA TAKASHI
分类号 C09K3/14;B24B37/00;C09G1/02;H01L21/304 主分类号 C09K3/14
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