| 发明名称 |
INTEGRATED CIRCUIT AND METHOD OF FABRICATING THE SAME |
| 摘要 |
An integrated circuit and a method of fabricating the integrated circuit are provided. In various embodiments, the integrated circuit includes a substrate and a polysilicon resistor. The polysilicon resistor is disposed on the substrate. The polysilicon resistor has at least one positive TCR portion and at least one negative TCR portion. The positive TCR portion is adjacent to the negative TCR portion, and the positive TCR portion is in direct contact with the negative TCR portion. |
| 申请公布号 |
US2016218171(A1) |
申请公布日期 |
2016.07.28 |
| 申请号 |
US201615088057 |
申请日期 |
2016.03.31 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
WANG Hung-Sen;YANG Shih-Chi;CHANG Kuo-Ching;HUNG Wei-Sho;LIOU Ho-Chun |
| 分类号 |
H01L49/02;H01L21/768;H01L27/06;H01L21/02;H01L21/762 |
主分类号 |
H01L49/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method, comprising:
depositing a polysilicon film on a substrate; patterning the polysilicon film to form a gate electrode of a MOS transistor and a polysilicon resistor; forming a protection film to define at least one negative TCR portion of the polysilicon resistor; and forming at least one positive TCR portion of the polysilicon resistor adjacent to the negative TCR portion of the polysilicon resistor. |
| 地址 |
Hsinchu TW |
