| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic random access memory capable of suppressing deterioration of reading characteristics due to manufacturing dispersion. SOLUTION: The memory is provided with first magnetoresistance effect elements MTJ1 to 0 arranged in a matrix to be used as storage elements, and a second magnetoresistance effect element BMTJ1 inserted in between a bit line to which the first magnetoresistance effect elements are connected and a reading bias power source to supply a negative current from the reading bias power source circuit. COPYRIGHT: (C)2007,JPO&INPIT |
