发明名称 Apparatus and Method for Materials Processing with Ion-Ion Plasma
摘要 A method and system for material processing employing extracting equivalent fluxes of positive and negative ions at two surfaces from an ion-ion plasma without substantially altering the plasma potential. The extraction is achieved by applying a continuously applied bias to the substrate being processed, in order to attract the ions to the substrate surface to facilitate materials processing such as etching, deposition and chemical modification at the surface. The continuously applied bias is applied via a power source coupled to the plate, also referred to as a stage or chuck, holding the substrate.
申请公布号 US2008087539(A1) 申请公布日期 2008.04.17
申请号 US20070868979 申请日期 2007.10.09
申请人 WALTON SCOTT G;LEONHARDT DARRIN;FERNSLER RICHARD F 发明人 WALTON SCOTT G.;LEONHARDT DARRIN;FERNSLER RICHARD F.
分类号 H05F3/00 主分类号 H05F3/00
代理机构 代理人
主权项
地址