发明名称 |
METHOD OF PREPARING A FILM LAYER-BY-LAYER USING PLASMA ENHANCED ATOMIC LAYER DEPOSITION |
摘要 |
A method for forming a thin film on a substrate layer by layer using plasma enhanced atomic layer deposition is described. The method comprises using a low power reduction step for at least one cycle in order to substantially avoid partial layer film growth, followed by using a high power reduction step for each cycle thereafter in order to increase deposition rate.
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申请公布号 |
WO2007024341(A3) |
申请公布日期 |
2009.04.23 |
申请号 |
WO2006US25985 |
申请日期 |
2006.06.29 |
申请人 |
TOKYO ELECTRON LIMITED;ISHIZAKA, TADAHIRO |
发明人 |
ISHIZAKA, TADAHIRO |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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