发明名称 METHOD OF PREPARING A FILM LAYER-BY-LAYER USING PLASMA ENHANCED ATOMIC LAYER DEPOSITION
摘要 A method for forming a thin film on a substrate layer by layer using plasma enhanced atomic layer deposition is described. The method comprises using a low power reduction step for at least one cycle in order to substantially avoid partial layer film growth, followed by using a high power reduction step for each cycle thereafter in order to increase deposition rate.
申请公布号 WO2007024341(A3) 申请公布日期 2009.04.23
申请号 WO2006US25985 申请日期 2006.06.29
申请人 TOKYO ELECTRON LIMITED;ISHIZAKA, TADAHIRO 发明人 ISHIZAKA, TADAHIRO
分类号 H01L21/44 主分类号 H01L21/44
代理机构 代理人
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