| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique for forming a monocrystalline layer through heat treatment at a temperature of the melting point of SiGeSn or GeSn or below by adding Sn.SOLUTION: The present invention relates to a method for producing a monocrystalline GeSn-containing material. The method includes: a preparation step of preparing an amorphous GeSn-containing material held on a holding substrate; a heating step of heating the amorphous GeSn-containing material; and a cooling step of cooling the amorphous GeSn-containing material. Further, the heating step can be performed by heating the amorphous GeSn-containing material up to a temperature of the melting point of the amorphous GeSn-containing material or above. |
