发明名称 |
HIGH CONDUCTIVITY HIGH FREQUENCY VIA FOR ELECTRONIC SYSTEMS |
摘要 |
A through silicon via is described that has conductivity at high frequencies. In one example, the via includes a channel through at least a portion of a silicon die. A first conductive layer has a first electrical conductivity. A second conductive layer covers the outer surface of the first conductive layer and has a second electrical conductivity higher than the first electrical conductivity. |
申请公布号 |
US2016225694(A1) |
申请公布日期 |
2016.08.04 |
申请号 |
US201314411382 |
申请日期 |
2013.06.27 |
申请人 |
BARTH Hans-Joachim;MAHNKOPF Reinhard;MOLZER Wolfgang;GOSSNER Harald;MUELLER Christian |
发明人 |
BARTH Hans-Joachim;MAHNKOPF Reinhard;MOLZER Wolfgang;GOSSNER Harald;MUELLER Christian |
分类号 |
H01L23/48;H01L23/532;H01L21/768;H01L23/66 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Munich DE |