发明名称 HIGH CONDUCTIVITY HIGH FREQUENCY VIA FOR ELECTRONIC SYSTEMS
摘要 A through silicon via is described that has conductivity at high frequencies. In one example, the via includes a channel through at least a portion of a silicon die. A first conductive layer has a first electrical conductivity. A second conductive layer covers the outer surface of the first conductive layer and has a second electrical conductivity higher than the first electrical conductivity.
申请公布号 US2016225694(A1) 申请公布日期 2016.08.04
申请号 US201314411382 申请日期 2013.06.27
申请人 BARTH Hans-Joachim;MAHNKOPF Reinhard;MOLZER Wolfgang;GOSSNER Harald;MUELLER Christian 发明人 BARTH Hans-Joachim;MAHNKOPF Reinhard;MOLZER Wolfgang;GOSSNER Harald;MUELLER Christian
分类号 H01L23/48;H01L23/532;H01L21/768;H01L23/66 主分类号 H01L23/48
代理机构 代理人
主权项
地址 Munich DE