| 发明名称 |
System And Method For Photomask Particle Detection |
| 摘要 |
The method includes performing a photolithography process which includes using a photomask to pattern a radiation beam. The photolithography process also includes exposing a target substrate to the patterned radiation beam. During the exposing of the target surface, there is a real-time monitoring for particles incident or approximate the photomask. |
| 申请公布号 |
US2016225610(A1) |
申请公布日期 |
2016.08.04 |
| 申请号 |
US201514610455 |
申请日期 |
2015.01.30 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
Chien Shang-Chieh;Chang Shu-Hao;Chou Hsiang-Yu;Kau Kuo-Chang;Wu Shun-Der;Chen Chia-Chen;Chen Jeng-Horng |
| 分类号 |
H01L21/027;H01L21/66;G03F7/20 |
主分类号 |
H01L21/027 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of fabricating a semiconductor device, the method comprising:
performing a photolithography process, wherein the performing the photolithography process includes: using a photomask to pattern a radiation beam; exposing a target substrate to the patterned radiation beam; and during the exposing the target substrate, monitoring for particles on the photomask. |
| 地址 |
Hsin-Chu TW |
