发明名称 半導体レーザの劣化兆候検出装置及び半導体レーザの劣化兆候検出方法
摘要 A signs-of-deterioration detector for a semiconductor laser includes a first light receiving section that acquires first information relating to an optical output of the semiconductor laser and a second light receiving section that acquires second information relating to an intensity distribution of the emission pattern below the lasing threshold of the semiconductor laser. The detector also includes a holding section that holds the first information and the second information at a predetermined time point T1. The detector further includes a deciding section that decides the presence or absence of signs of rapid decrease of the optical output of the semiconductor laser by comparing the first information and the second information at at least one time point Tn (T1<Tn), with those at the time point T1.
申请公布号 JP6021307(B2) 申请公布日期 2016.11.09
申请号 JP20110193549 申请日期 2011.09.06
申请人 キヤノン株式会社 发明人 須賀 貴子;内田 武志
分类号 H01S5/0683;G01M11/00;G01R31/26 主分类号 H01S5/0683
代理机构 代理人
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