发明名称 FORMATION METHOD OF COATING FILM FOR LITHOGRAPHY
摘要 PROBLEM TO BE SOLVED: To provide a method for forming a coating film for lithography, reducing the coating defect significantly by using a composition for forming a coating film for lithography.SOLUTION: In a method for forming a coating film for lithography on a substrate for manufacturing a semiconductor device, by using a rotary coating device including an integrated filter integrating the housing and a filtration film, rotary coating the substrate for manufacturing a semiconductor device with a composition for forming a coating film for lithography, and then heating the substrate for manufacturing a semiconductor device coated with the composition for forming a coating film for lithography, a filter is used as the integrated filter, in which the weight of eluate per one filter extracted when circulating an organic solvent at a rate of 10 ml per minute for 24 hours is 3 mg or less.SELECTED DRAWING: None
申请公布号 JP2016201426(A) 申请公布日期 2016.12.01
申请号 JP20150079618 申请日期 2015.04.08
申请人 SHIN ETSU CHEM CO LTD 发明人 OGIWARA TSUTOMU;MORISAWA TAKUMI
分类号 H01L21/027;B01D71/26;B01D71/32;B01D71/56 主分类号 H01L21/027
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