发明名称 高電圧部ポッティング構造及び高電圧部のポッティング方法
摘要 PROBLEM TO BE SOLVED: To provide a high voltage part potting structure that inhibits the occurrence and development of cracks in a potting material (a resin), easily prevents the insulation deterioration, and is suitable for a case that potting is conducted not for each terminal but for an entire circuit at one time, and to provide a potting method of the high voltage part.SOLUTION: A high voltage part potting structure includes: a transformer 1; a substrate 2; a chassis 5 supporting the transformer 1 and the substrate 2; and a potting material 6 filling areas around the transformer 1 and the substrate 2 and sealing the transformer 1, the substrate 2, and a nonwoven cloth (one of a first nonwoven cloth 3, a second nonwoven cloth 4, a third nonwoven cloth 7, a nonwoven cloth piece 8).
申请公布号 JP6044109(B2) 申请公布日期 2016.12.14
申请号 JP20120107795 申请日期 2012.05.09
申请人 三菱電機株式会社 发明人 佐藤 拓也;石原 秀泰
分类号 H01F27/32;H01F30/10;H01F37/00;H01F41/12 主分类号 H01F27/32
代理机构 代理人
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