BIPOLAR DIODE WITH A TRENCH GATE

摘要

A bipolar p-i-n diode has a first (1) and second (5) region of opposite conductivity type and an intermediate drift region (3) between the first and second regions. Trenched field relief regions (14) are arranged to deplete the intermediate drift region (3) when the diode is reverse biased, so permitting a higher doping (12) to be used for the intermediate drift region (3) for a given breakdown voltage. This improves both the turn-on and turn-off characteristics of the diode.