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发明名称
HIGH DENSITY RECORDING MEDIUM WITH SUPER-RESOLUTION NEAR-FIELD STRUCTURE MANUFACTURED USING HIGH-MELTING POINT METAL OXIDE OR SILICON OXIDE MASK LAYER
摘要
申请公布号
EP1543505(A1)
申请公布日期
2005.06.22
申请号
EP20030798584
申请日期
2003.09.24
申请人
SAMSUNG ELECTRONICS CO., LTD.;NATIONAL INSTITUE OF ADVANCED INDUSTRIAL SCIENCE
发明人
KIM, JOO-HO;TOMINAGA, JUNJI
分类号
G11B7/24;G11B5/62;G11B7/0045;G11B7/243;G11B7/254;G11B7/257;G11B7/258;G11B9/12;(IPC1-7):G11B5/62
主分类号
G11B7/24
代理机构
代理人
主权项
地址
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