发明名称 High pressure crystal growth apparatuses and associated methods
摘要 High pressure synthesis of various crystals such as diamond, cBN and the like can be carried out using temperature gradient methods wherein the reaction assembly (210) is oriented substantially perpendicular to gravity (224) during application of high pressure. Orienting the reaction assembly (210) in this manner can avoid detrimental effects of gravity on the molten catalyst, e.g., convection, hence increasing available volumes for growing high quality crystals. Multiple reaction assemblies can be oriented in series or parallel, each reaction assembly having one or more growth cells suitable for growth of high quality crystals. The unique split die design of the present invention allows for particularly effective results and control of temperature and growth conditions for individual crystals.
申请公布号 ZA200605699(B) 申请公布日期 2007.11.28
申请号 ZA20060005699 申请日期 2005.01.12
申请人 SUNG, CHIEN-MIN 发明人 SUNG, CHIEN-MIN
分类号 B01J3/06;B28B3/00;B29C;B29C43/02;B30B11/00;C30B;C30B1/00 主分类号 B01J3/06
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