| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device (SGT structure) having a small number of processes in manufacturing and protecting an upper part of a silicon column during etching of a gate.SOLUTION: A semiconductor device comprises: a planar silicon layer 107 formed on a silicon substrate 101; columnar silicon layers 104, 105 formed on the planar silicon layer; a gate insulation film 109 formed around the columnar silicon layers; gate electrodes 117a, 117b formed around the gate insulation film; a gate wiring 117c connected to the gate electrodes; n-type or p-type first diffusion layers 119, 125 formed on upper parts of the columnar silicon layers; second diffusion layers 120, 126 formed on lower parts of the columnar silicon layers and on an upper part of the planar silicon layer, and having the same conductivity type as the first diffusion layers; an insulation film sidewall 201 formed on upper sidewalls of the columnar silicon layers and upper parts of the gate electrodes; and another insulation film sidewall 202 formed on the insulation film sidewall, the gate electrodes, and the sidewall of the gate wiring.SELECTED DRAWING: Figure 1 |
