| 摘要 |
PROBLEM TO BE SOLVED: To suppress an increase in a reverse leakage current even when a connector is connected to a semiconductor device through a solder electrode.SOLUTION: A semiconductor device 1 comprises: a semiconductor substrate 2; a cathode region 3 provided so as to extend from a principal surface 2a of the semiconductor substrate 2 to a predetermined depth; a drift region 4 provided so as to extend from the principal surface 2b and reach the cathode region 3; a plurality of trench regions 5 provided so as to extend from the principal surface 2b to a direction toward an inside of the semiconductor substrate 2; a barrier metal layer 9 provided on the principal surface 2b so as to cover an active region 8 including an exposed surface 5a of the plural trench regions 5 and forming a Schottky junction with the drift region 4; an anode electrode layer 10 provided on the barrier metal layer 9; a solder removing portion 11 which is provided on the side of the principal surface 2b and formed so as to prevent adhesion of solder; and a solder electrode 12 provided in a solder electrode formation region 10a partitioned by the solder exclusion portion 11 on an upper surface of the anode electrode layer 10. |
