ZIRCONIUM, HAFNUIM, TITANIUM, AND SILICON PRECURSORS FOR ALD/CVD

摘要

Zirconium, hafnium, titanium and silicon precursors useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of corresponding zirconium-containing, hafnium- containing, titanium-containing and silicon-containing films, respectively. The disclosed precursors achieve highly conformal deposited films characterized by minimal carbon incorporation.