| 摘要 |
<p>A semiconductor device and manufacturing method thereof are provided to suppress the warpage caused by the wire bonding. The electrode terminal(106) is arranged in the supporting body(101). The intermediate member is mounted on the supporting body. A part of the semiconductor device is supported by the intermediate member. The semiconductor device is arranged on the supporting body. The block shaped member is arranged on the supporting body or the intermediate member. The electrode terminal on the electrode terminal of the semiconductor device and the supporting body are connected to the bonding wire(109).</p> |
