| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide sintered compact which has good plasma resistance and can be subjected to electrical discharge machining.SOLUTION: There is provided a method for producing a silicon carbide sintered compact which comprises: a first step 1 of reacting a carbon source and a silicon source to obtain a silicon carbide powder containing β-type silicon carbide; a second step 2 of treating the silicon carbide powder obtained in the first step at 2200 to 2300°C to change a part of the β-type silicon carbide to α-type silicon carbide and obtain a silicon carbide powder containing the α-type silicon carbide and the β-type silicon carbide in a prescribed ratio of 65 to 85 wt.% of the α-type silicon carbide and 15 to 35 wt.% of the β-type silicon carbide; a third step 3 of pulverizing the silicon carbide powder obtained in the second step; and a fourth step 4 of sintering the silicon carbide powder obtained in the third step to obtain a silicon carbide sintered compact having an electric resistivity of less than 1 Ω cm.SELECTED DRAWING: Figure 1 |
