Method of forming a gate electrode in a flash memory devices,申请号KR20040008032-传众专利搜索

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发明名称	Method of forming a gate electrode in a flash memory devices
摘要
申请公布号	KR100590395(B1)	申请公布日期	2006.06.15
申请号	KR20040008032	申请日期	2004.02.06
申请人		发明人
分类号	H01L21/8247	主分类号	H01L21/8247
代理机构		代理人
主权项
地址

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