发明名称 Method of processing substrate, and method of and program for manufacturing electronic device
摘要 A method of processing a substrate that enables the amount removed of a surface damaged layer to be controlled easily, and enable a decrease in wiring reliability to be prevented. A surface damaged layer having a reduced carbon concentration of a carbon-containing low dielectric constant insulating film on a substrate is exposed to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure. The surface damaged layer that has been exposed to the atmosphere of the mixed gas is heated to a predetermined temperature.
申请公布号 US2006194435(A1) 申请公布日期 2006.08.31
申请号 US20060353132 申请日期 2006.02.14
申请人 TOKYO ELECTRON LIMITED 发明人 NISHIMURA EIICHI;IWASAKI KENYA
分类号 C03C25/68;H01L21/302 主分类号 C03C25/68
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