发明名称 |
Method of processing substrate, and method of and program for manufacturing electronic device |
摘要 |
A method of processing a substrate that enables the amount removed of a surface damaged layer to be controlled easily, and enable a decrease in wiring reliability to be prevented. A surface damaged layer having a reduced carbon concentration of a carbon-containing low dielectric constant insulating film on a substrate is exposed to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure. The surface damaged layer that has been exposed to the atmosphere of the mixed gas is heated to a predetermined temperature.
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申请公布号 |
US2006194435(A1) |
申请公布日期 |
2006.08.31 |
申请号 |
US20060353132 |
申请日期 |
2006.02.14 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
NISHIMURA EIICHI;IWASAKI KENYA |
分类号 |
C03C25/68;H01L21/302 |
主分类号 |
C03C25/68 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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