| 摘要 |
A vertical cavity surface emitting laser (VCSEL) device includes has an epitaxial layer structure formed on a GaAs substrate and including a pair of multilayer reflectors and a tunnel junction structure. The tunnel junction structure is configured by a heavily-doped n-type Ti<SUB>x2</SUB>In<SUB>x1</SUB>Ga<SUB>1-x1-x2</SUB>As<SUB>1-y1-y2</SUB>N<SUB>y1</SUB>Sb<SUB>y2 </SUB>mixed-crystal layer and a heavily-doped p-type Ti<SUB>x4</SUB>In<SUB>x3</SUB>Ga<SUB>1-x3-x4</SUB>As<SUB>1-y3-y4</SUB>N<SUB>y3</SUB>Sb<SUB>y4 </SUB>mixed-crystal layer, where 0<=x2<=0.3, 0<=x1<=0.3, 0<y1<=0.05, 0<y2<=0.3, 0<=x4<=0.3, 0<=x3<=0.05, 0<y3<=0.05, and 0<y4<=0.3.
|
