| 发明名称 |
NANOCRYSTALLINE LAYERS AND IMPROVED MRAM TUNNEL JUNCTIONS |
| 摘要 |
<p>An improved and novel device and fabrication method for a magnetic element, and more particularly a magnetic element with a crystallographically disordered seed layer and/or template layer seeding the nanocrystalline growth of subsequent layers, including a pinning layer, a pinned layer, and fixed layer.</p> |
| 申请公布号 |
EP1547102(B1) |
申请公布日期 |
2007.05.02 |
| 申请号 |
EP20030816719 |
申请日期 |
2003.07.24 |
| 申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
SLAUGHTER, JON, M.;DAVE, RENU, W.;SUN, JIJUN |
| 分类号 |
H01F10/32;H01F41/30 |
主分类号 |
H01F10/32 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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