发明名称 SEMICONDUCTOR APPARATUS, STACKED SEMICONDUCTOR APPARATUS, ENCAPSULATED STACKED-SEMICONDUCTOR APPARATUS, AND METHOD FOR MANUFACTURING THE SAME
摘要 The present invention is a semiconductor apparatus including a semiconductor device, an on-semiconductor-device metal pad and a metal interconnect each electrically connected to the semiconductor device, a through electrode and a solder bump each electrically connected to the metal interconnect, a first photosensitive insulating layer formed on the semiconductor device, and a second photosensitive insulating layer formed on the first photosensitive insulating layer, in which the first and second photosensitive insulating layers are composed of a photo-curable resin composition containing a silicone polymer compound having an epoxy group-containing repeating unit shown by formula (1) and a phenolic hydroxyl group-containing repeating unit shown by formula (2), a photosensitive acid generator, a solvent, and crosslinking agents. There can be provided a semiconductor apparatus that can be easily placed on a circuit board and stacked by forming a fine electrode on the semiconductor device and providing a through electrode outside the semiconductor device.;
申请公布号 US2016358833(A1) 申请公布日期 2016.12.08
申请号 US201615163016 申请日期 2016.05.24
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 SOGA Kyoko;ASAI Satoshi;TAKEMURA Katsuya
分类号 H01L23/29;H01L25/00;G03F7/075;G03F7/20;G03F7/40;H01L25/065;H01L21/56 主分类号 H01L23/29
代理机构 代理人
主权项 1. A semiconductor apparatus comprising: a semiconductor device; an on-semiconductor-device metal pad electrically connected to the semiconductor device; a metal interconnect electrically connected to the semiconductor device; a through electrode electrically connected to the metal interconnect; a solder bump electrically connected to the metal interconnect; a first photosensitive insulating layer formed on the semiconductor device; and a second photosensitive insulating layer formed on the first photosensitive insulating layer, wherein the first photosensitive insulating layer and the second photosensitive insulating layer are composed of a photo-curable resin composition containing (A) a silicone polymer compound having an epoxy group-containing repeating unit shown by the following general formula (1) and a phenolic hydroxyl group-containing repeating unit shown by the following general formula (2), wherein the silicone polymer compound has a weight average molecular weight of 3,000 to 500,000 and satisfies 0.05≦J/(J+K)≦0.95 where J is a mole of epoxy groups in the general formula (1) and K is a mole of phenolic hydroxyl groups in the general formula (2),wherein a and b represent a positive number; R1, R2, R3, and R4 may be the same or different and represent a hydrogen atom or an alkyl or alkoxy group having 1 to 4 carbon atoms; r independently represents 0, 1, or 2; R5 to R8 independently represent a hydrogen atom or a monovalent hydrocarbon group having 1 to 10 carbon atoms; R9 represents a divalent hydrocarbon group having 1 to 10 carbon atoms; n represents 0 or 1; k represents 0, 1, or 2; R10 and R11 may be the same or different and represent an alkyl or alkoxy group having 1 to 4 carbon atoms; Z represents a divalent organic group selected from any ofand X represents a divalent organic group shown by the following formula (3) or the following general formula (4),wherein R12, R13, R14, and R15 may be the same or different and represent a monovalent hydrocarbon group having 1 to 10 carbon atoms; and m represents a positive number of 1 to 100, (B) a photosensitive acid generator capable of generating an acid by decomposition with light having a wavelength of 190 to 500 nm, (C) a solvent, (D) one or two or more compounds selected from an amino condensate modified with formaldehyde or formaldehyde-alcohol, a phenol compound having on average two or more methylol groups or alkoxymethylol groups per molecule, and a polyhydric phenol compound whose phenolic hydroxyl group is substituted with a glycidoxy group, and (E) one or two or more compounds selected from polyhydric phenols having 3 or more hydroxyl groups.
地址 Tokyo JP