Semiconductor component i.e. MOSFET, has floating doped regions electrically connected with field plates and formed complementary to drift distance, where field plates are coupled with field plates voltage limiting structure

摘要

The component has a semiconductor body (4) including electrodes (5, 7). A lateral drift distance (9) is provided between the electrodes. Field plates (F1), which are isolatedly arranged in series in the drift distance, are laterally aligned and vertically projected. Floating doped regions (10) are electrically connected with the field plates, and are formed complementary to the drift distance. The field plates are coupled with a field plates voltage limiting structure (3), which includes Zener diodes that are separately arranged from the component. An independent claim is also included for a method for manufacturing a set of semiconductor chips for semiconductor components.