| 发明名称 |
METHOD AND APPARATUS FOR FABRICATING SEMICONDUCTOR DEVICE TO STABLY GUARANTEE LATERAL PROFILE OF ETCH TARGET PATTERN WHILE ETCH BYPRODUCT IS ELIMINATED |
| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to stably guarantee a lateral profile of an etch target pattern while etch byproducts are eliminated by supplying a solution for removing the etch byproducts at a temperature lower than room temperature. CONSTITUTION: A solution for removing the etch byproducts generated when an etch object of a semiconductor device is etched is formed at a temperature lower than room temperature. The byproducts are eliminated by using the removal solution formed at the temperature lower than room temperature.
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| 申请公布号 |
KR20050017753(A) |
申请公布日期 |
2005.02.23 |
| 申请号 |
KR20030055012 |
申请日期 |
2003.08.08 |
| 申请人 |
DONGBUANAM SEMICONDUCTOR INC. |
发明人 |
LEE, CHEA GAB;NAM, SANG WOO |
| 分类号 |
H01L21/3065;B08B3/02;H01L21/00;H01L21/02;H01L21/304;H01L21/306;H01L21/308;H01L21/311;H01L21/3213;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/3065 |
| 代理机构 |
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