SEPARATION OF SEMICONDUCTOR DEVICES FOR LIGHT EMISSION

摘要

Separation of Semiconductor Devices for Light Emission A method of fabricating semiconductor devices for light emission is disclosed. The method comprises providing a substrate with a plurality of epitaxial layers mounted on the substrate and separating the substrate from the plurality of epitaxial layers while the plurality of epitaxial layers are intact while preserving electrical and mechanical properties of the plurality of epitaxial layers. Subsequent to separation of the substrate, a first stage of device isolation is performed by trench etching along edges of each mesa.