发明名称 CMOS STORAGE DEVICES CONFIGURABLE IN HIGH PERFORMANCE MODE OR RADIATION TOLERANT MODE
摘要 A radiation tolerant circuit, structure of the circuit and method of autonomic radiation event device protection. The circuit includes a charge storage node connected to a resistor, the resistor comprising a material having an amorphous state and a crystalline state, the amorphous state having a higher resistance than the crystalline state, the material reversibly convertible between the amorphous state and the crystalline state by application of heat; an optional resistive heating element proximate to the resistor; and means for writing data to the charge storage node and means for reading data from the charge storage node.
申请公布号 US2009059657(A1) 申请公布日期 2009.03.05
申请号 US20070845170 申请日期 2007.08.27
申请人 CANNON ETHAN H;GORDON MICHAEL S;LEBLANC CHRISTOPHER D;RODBELL KENNETH P 发明人 CANNON ETHAN H.;GORDON MICHAEL S.;LEBLANC CHRISTOPHER D.;RODBELL KENNETH P.
分类号 G11C11/00;H01L47/00 主分类号 G11C11/00
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