| 摘要 |
PROBLEM TO BE SOLVED: To form an Er dope ZnO phosphor film which obtains strong emission and continuous two-dimensionally.SOLUTION: The method comprises: a first step S101 for heating a substrate 101 having a main surface which is a C surface or an A surface and formed of sapphire (corundum) to temperature in a range of 550°C or higher and 900°C or lower (heating step); and a second step for forming a phosphor film 102 formed of ZnO in which Er is doped on the main surface of the heated substrate 101 by a sputter method (phosphor film formation step). In formation of the phosphor film 102 by the sputter method, a ratio of Er atom number to total sum of atom number of Er and Zn in the phosphor film 102 becomes 0.6at.% or more and 3at.% or less. |
