METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES

摘要

PURPOSE: A fabrication method of semiconductor devices is provided to achieve misalign margin between a storage node and a storage node contact and increasing surface area of the storage node. CONSTITUTION: The method comprises the steps of forming a first opening by etching a first insulator(107) formed on a semiconductor substrate(100); forming a contact pad(110) by filling a conductive material into the first opening; sequentially forming a second insulator(112), a third insulator(116), a nitride film(117) having relatively low etching selectivity compared to the third insulator(116) and a fourth insulator(118), wherein the fourth insulator(118) is made of BPSG enable to reflow processing; forming a second opening by etching the insulators; filling a conductive material into the second opening; forming a contact plug(120) by polishing or etch-back the conductive material; narrowing the width of aperture of the second opening by reflowing the fourth insulator(118); and forming a storage node(122) connected to the contact plug(120).