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发明名称
METHOD FOR TESTING AND DIAGNOSING MOS TRANSISTORS
摘要
<p>A direct-current current-voltage (DCIV) method enables rapid evaluation of the degradation of deep-submicron nMOSTs and pMOSTs under channel hot carrier stress resulting from a p/n junction forward biased at a safe operating voltage level.</p>
申请公布号
WO1998045719(A1)
申请公布日期
1998.10.15
申请号
US1998006703
申请日期
1998.04.04
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