FERRO-ELECTRIC MEMORY

摘要

PURPOSE: A ferro-electric memory is provided to reduce the chip size by realizing of a ferro-electric RAM(FERAM) structure for outputting information CONSTITUTION: The ferro-electric memory includes a word line driving the predetermined cell selection according to address input, a bit line arranged for crossing rectangularly with the word line, a switching transistor cross-interconnected between the word line and the bit line, and dielectric capacitors connected each corresponding plate lines and connected with one side terminal of the switching transistor commonly. The memory outputs many data by selecting one cell. The memory includes furthermore plate lines connected with corresponding the dielectric capacitors, and a sense amplifier detecting voltage change of the plate line by connecting the plate line.