| 摘要 |
A magnetic field is applied to a defective semiconductor device to be tested. A current is applied from a power supply to a wiring of the semiconductor device. At this time, a stress occurs to the wiring of the semiconductor device. A stress detector detects the stress and creates a first stress image. Next, a same magnetic field and a same current are applied to a good semiconductor device same in type and a stress is detected. By doing so, a second stress image as a comparison stress image is created. Next, a difference image between the first and second stress images is created by an image processor. As a result, only a stress resulting from a leak current is extracted. Next, the difference image is compared with a wiring pattern image of the semiconductor device to thereby specify a leakage portion.
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