METHOD FOR PRODUCING SILICON WAFER

摘要

The present invention is a method for producing a silicon wafer that has a defect-free region in the surface layer by subjecting a silicon wafer to be processed to a heat treatment. This method for producing a silicon wafer is characterized by comprising: a step A wherein only the upper surface layer of the silicon wafer to be processed is subjected to a first rapid heat treatment at a temperature of from 1,300°C to the melting point of silicon (inclusive) for a time of from 0.01 msec to 100 msec (inclusive) by means of a first heat source that heats the silicon wafer to be processed from above; and a step B wherein the silicon wafer to be processed is maintained at a temperature of 1,100°C or more but less than 1,300°C for a time of from 1 sec to 100 sec (inclusive) by a second rapid heat treatment using a second heat source that heats the silicon wafer to be processed, and then the temperature of the silicon wafer to be processed is lowered at a temperature lowering rate of from 30°C/sec to 150°C/sec (inclusive). Consequently, there is provided a method for producing a silicon wafer, which is capable of forming a high-density BMD in a bulk and is also capable of producing a silicon single crystal wafer having good TDDB characteristics.