发明名称 |
Bit error rate mapping in a memory system |
摘要 |
A memory system or flash memory device may include identify a bit error rate (BER) mapping for the memory. The BER mapping may be used for identifying erroneous bits, managing them, and using them for the system maintenance and system recovery. A complete BER map may be stored in main memory while a cached version of the BER map may be stored in random access memory (RAM). The cached version may identify only the top and bottom bits rather than the complete map. The cached BER map may be updated based on future reads and future programming may rely on the cached BER map for selecting blocks to program. |
申请公布号 |
US9478315(B2) |
申请公布日期 |
2016.10.25 |
申请号 |
US201414294864 |
申请日期 |
2014.06.03 |
申请人 |
SanDisk Technologies LLC |
发明人 |
Yang Nian Niles;Huang Jianmin;Bauche Alexandra |
分类号 |
G11C29/44;G11C29/52;G06F3/06;G06F12/02;G06F11/07;G11C29/04 |
主分类号 |
G11C29/44 |
代理机构 |
Brinks Gilson & Lione |
代理人 |
Brinks Gilson & Lione |
主权项 |
1. A memory device comprising:
a non-volatile storage having memory blocks storing data; and a controller in communication with the non-volatile storage, the controller is configured to:
generate a bit error rate mapping that identifies an error rate for the memory blocks, wherein the bit error rate mapping is stored in the non-volatile storage; andstore a partial bit error rate mapping in cache that is a subset of the bit error rate mapping stored in the non-volatile storage, wherein the partial bit error rate mapping identifies an error rate for a portion of the memory blocks with a higher error rate and identifies an error rate for a portion of the memory blocks with a lower error rate. |
地址 |
Plano TX US |