| 发明名称 | Variable resistance memory apparatus, manufacturing method thereof | ||
| 摘要 | A variable resistance memory apparatus and a method of manufacturing the same are provided. The variable resistance memory apparatus includes a plurality of memory cells. Each of the memory cells includes a plurality of data storage regions. The plurality of data storage regions have different widths from each other. | ||
| 申请公布号 | US9478281(B2) | 申请公布日期 | 2016.10.25 |
| 申请号 | US201414151565 | 申请日期 | 2014.01.09 |
| 申请人 | SK Hynix Inc. | 发明人 | Son Min Seok |
| 分类号 | G11C11/00;G11C13/00;G11C11/56;H01L45/00;H01L27/24 | 主分类号 | G11C11/00 |
| 代理机构 | IP & T Group LLP | 代理人 | IP & T Group LLP |
| 主权项 | 1. A variable resistance memory apparatus, comprising: a plurality of memory cells, each of the memory cells including a plurality of data storage regions, wherein the plurality of data storage regions include a plurality of data storage units for storing data and the plurality of data storage units have different widths from each other and different heights from each other. | ||
| 地址 | Gyeonggi-do KR | ||