| 主权项 |
1. An electronic device comprising a semiconductor memory,
wherein the semiconductor memory comprises: first and second active regions arranged adjacent to each other in a second direction; a gate structure extended in the second direction so as to cross the first and second active regions; a first source region and a first drain region formed in the first active region at one side and the other side of the gate structure, respectively; a second source region and a second drain region formed in the second active region at one side and the other side of the gate structure, respectively; a source line contact formed over the first and second source regions and connected to the first and second source regions; a source line connected to the source line contact over the source line contact and extended in a first direction crossing the second direction; first and second stacked structures formed over the first and second drain regions and connected to the first and second drain regions, respectively, each stacked structure including a bottom electrode contact, a variable resistance element, and a top electrode contact; and first and second bit lines formed over the first and second stacked structures and connected to the first and second stacked structures, respectively, wherein the first and second bit lines are extended in the first direction. |
