MULTICHANNEL DEVICES WITH IMPROVED PERFORMANCE AND METHODS OF MAKING THE SAME

摘要

A transistor device is provided that comprises a base structure, and a superlattice structure overlying the base structure and comprising a multichannel ridge having sloping sidewalls. The multichannel ridge comprises a plurality of heterostructures that each form a channel of the multichannel ridge, wherein a parameter of at least one of the heterostructures is varied relative to other heterostructures of the plurality of heterostructures. The transistor device further comprises a three-sided gate contact that wraps around and substantially surrounds the top and sides of the multichannel ridge along at least a portion of its depth.

主权项

1. A method of forming a transistor device, the method comprising:
forming a superlattice structure comprising a plurality of heterostructures over a base structure by sequentially depositing each layer of a plurality heterostructures over the base structure with one layer of each heterostructure being doped; etching away openings in the superlattice structure over a channel region to form a castellated region in the channel region of alternating multichannel ridges with edges and non-channel openings, wherein a parameter of at least one of corresponding parallel heterostructures of each of the multichannel ridges is varied; and performing a gate contact fill process to form a gate contact that wraps around and substantially surrounds the top and sides of each the plurality of multichannel ridges along at least a portion of its depth and connects each one of the alternating multichannel bridges to one another through the non-channel openings.