| 摘要 |
PURPOSE:To practically nullify the silane base concentration in exhaust gas by using solid metal oxide, oxide of metal, such as Li and Na, as the main constituent of an advanced treating agent for silane base gas contg. exhaust gas discharged from a semiconductor device. CONSTITUTION:A quartz pipe 1 is packed with a treating agent constituting of solid metal oxide particles of Li, Na, K, etc., to form a packed layer 2. And after silane base gas contg. exhaust gas discharged from a semiconductor device is stored in a gasholder 4, it is passed through the packed layer 2 whose main component is a treating agent consisting of solid metal oxide via a mall flow controller 5, a valve 6 and a pump 7. The treated gas from an outlet of the packed layer 2 is introduced into a gas chromatograph through a gas chromatograph sampler to analyze the monosilane concentration in the gas. The result is that it is about <=0.5ppm, preferably <=0.1ppm, practically zero. |
