发明名称 |
IMAGE SENSOR WITH HIGH DYNAMIC RANGE AND METHOD |
摘要 |
In one form, a pixel for use in image sensing comprises a photodetector, a sink device, and a readout circuit. The photodetector is formed in a semiconductor substrate and has a charge collection region for receiving photocharge representative of incident light. The sink device is formed in the semiconductor substrate and adjacent to the charge collection region and has a gate overlying and insulated from the semiconductor substrate and receiving a responsivity control signal. The readout circuit transfers the photocharge collected by the charge collection region of the photodetector to an output in response to a select signal. In another form, the pixel may be used in an image sensor having a pixel array of such pixels. |
申请公布号 |
US2016381314(A1) |
申请公布日期 |
2016.12.29 |
申请号 |
US201514748513 |
申请日期 |
2015.06.24 |
申请人 |
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC |
发明人 |
BOCK Nikolai |
分类号 |
H04N5/378;H04N5/232;H04N5/225;H04N5/235;H04N5/376 |
主分类号 |
H04N5/378 |
代理机构 |
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代理人 |
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主权项 |
1. An image sensor comprising a pixel array, each pixel of said pixel array comprising:
a photodetector formed in a semiconductor substrate and having a charge collection region for receiving photocharge representative of incident light; a sink device formed in said semiconductor substrate and adjacent to said charge collection region having a gate overlying and insulated from said semiconductor substrate and receiving a responsivity control signal; and a readout circuit for transferring said photocharge collected by said charge collection region of said photodetector to an output in response to a select signal. |
地址 |
Phoenix AZ US |