发明名称 IMAGE SENSOR WITH HIGH DYNAMIC RANGE AND METHOD
摘要 In one form, a pixel for use in image sensing comprises a photodetector, a sink device, and a readout circuit. The photodetector is formed in a semiconductor substrate and has a charge collection region for receiving photocharge representative of incident light. The sink device is formed in the semiconductor substrate and adjacent to the charge collection region and has a gate overlying and insulated from the semiconductor substrate and receiving a responsivity control signal. The readout circuit transfers the photocharge collected by the charge collection region of the photodetector to an output in response to a select signal. In another form, the pixel may be used in an image sensor having a pixel array of such pixels.
申请公布号 US2016381314(A1) 申请公布日期 2016.12.29
申请号 US201514748513 申请日期 2015.06.24
申请人 SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC 发明人 BOCK Nikolai
分类号 H04N5/378;H04N5/232;H04N5/225;H04N5/235;H04N5/376 主分类号 H04N5/378
代理机构 代理人
主权项 1. An image sensor comprising a pixel array, each pixel of said pixel array comprising: a photodetector formed in a semiconductor substrate and having a charge collection region for receiving photocharge representative of incident light; a sink device formed in said semiconductor substrate and adjacent to said charge collection region having a gate overlying and insulated from said semiconductor substrate and receiving a responsivity control signal; and a readout circuit for transferring said photocharge collected by said charge collection region of said photodetector to an output in response to a select signal.
地址 Phoenix AZ US