发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 <P>PROBLEM TO BE SOLVED: To provide a protective circuit that suppresses thermal damage of a power supply circuit and suppresses damage due to heat generation of the power supply circuit, and provide a protective circuit and a power supply circuit with small occupied area and low manufacturing cost. <P>SOLUTION: A semiconductor integrated circuit includes a voltage conversion circuit, and a control circuit having a voltage division circuit and a protective circuit. The protective circuit includes a first oxide semiconductor transistor whose off current increases as the temperature rises, a capacitor accumulating the off current as charges, a second oxide semiconductor transistor, and an operational amplifier whose non-inversion input terminal receives reference voltage. The first oxide semiconductor transistor is disposed adjacent to a heat generation element of the voltage conversion circuit or the control circuit. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012257447(A) 申请公布日期 2012.12.27
申请号 JP20120113607 申请日期 2012.05.17
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 SATO TAKENAO
分类号 H02M3/135;G05F3/24;H02M7/06 主分类号 H02M3/135
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