COMPOSITE CARRIER FOR WARPAGE MANAGEMENT

摘要

A composite carrier is disclosed for warpage management as a temporary carrier in semiconductor process. Warpage is reduced for a product, semi-product, or build-up layer processed on the temporary composite carrier which is peeled off the temporary carrier in a later step. The composite carrier comprises a top substrate and a bottom substrate, an adhesive layer is configured in between the top substrate and a bottom substrate. One of the embodiments discloses the top substrate of the composite carrier having a lower CTE and the bottom substrate of the composite carrier having a higher CTE.

主权项

1. A composite carrier for warpage management, comprises:
a top substrate, selected from a group consisting of Invar (1 ppm), silicon (Si, ˜3 ppm), Cemented Carbide (˜5.5 ppm), Alumina (Al, ˜7.2 ppm), Titanium (Ti, ˜8.6 ppm), glass (0˜10 ppm), copper clad laminate (CCL, 1˜17 ppm), stainless steel (10˜18 ppm), alloy 42 (˜4.8 ppm), Aluminum Oxide (Al2O3, ˜7 ppm), Aluminum Nitride (AlN, ˜5 ppm), and Zirconia (ZrO2, ˜10.5 ppm); a bottom substrate, selected from a group consisting of Invar (1 ppm), silicon (Si, ˜3 ppm), Cemented Carbide (˜5.5 ppm), Alumina (Al, ˜7.2 ppm), Titanium (Ti, ˜8.6 ppm), glass (0˜10 ppm), copper clad laminate (CCL, 1˜17 ppm), stainless steel (10˜18 ppm), alloy 42 (˜4.8 ppm), Aluminum Oxide (Al2O3, ˜7 ppm), Aluminum Nitride (AlN, ˜5 ppm), and Zirconia (ZrO2, 18 10.5 ppm); configured on bottom of the top substrate; and an adhesive layer, configured between the top substrate and the bottom substrate; wherein a top of the top substrate provides area for semiconductor process thereon.