CROSS-POINT MEMORY SINGLE-SELECTION WRITE TECHNIQUE

摘要

A system and technique is disclosed for writing data in a cross-point memory. The state of one or more memory cells of the cross-point memory are sensed and then are continued to be selected and left on. It is then determined which of the one or more memory cells are to change state based on incoming user data that is to be written into the one or more memory cells. The one or more memory cells determined to change state and are still selected to be on are then written by applying a write-current pulse to the memory cells. In one exemplary embodiment, the one or more memory cells comprise one or more phase-change-type memory cell devices.

主权项

1. A method comprising:
selecting memory cells of a memory device to read responsive to a write operation; sensing a state of the selected memory cells and leaving the selected memory cells on; determining which of the selected memory cells are to change state based on user data for the write operation; applying a write-current pulse to one or more memory cells of the selected memory cells that are determined to change state for the write operation; and masking one or more remaining memory cells of the selected memory cells that are determined to not change state so that the write-current pulse is not applied to the one or more remaining memory cells.