发明名称 |
Non-volatile semiconductor memory device having improved sense amplification configuration |
摘要 |
In the non-volatile semiconductor memory device, for a current mirror for reading out data of a memory cell, a diode-connected transistor and a cut transistor are provided. The diode-connected transistor makes a precharged voltage level lower than a power supply voltage level. The cut transistor reduces current consumption.
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申请公布号 |
US2002110021(A1) |
申请公布日期 |
2002.08.15 |
申请号 |
US20010931758 |
申请日期 |
2001.08.20 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
KAI YOSHIHIDE;OHBA ATSUSHI;NOJIRI ISAO |
分类号 |
G11C16/06;G11C16/26;G11C16/28;(IPC1-7):G11C11/34 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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