发明名称 |
Process for integrating on an inert substrate a device comprising at least a passive element and an active element and corresponding integrated device |
摘要 |
A process is described for integrating, on an inert substrate, a device having at least one passive component and one active component. The process comprises: deposition of a protection dielectric layer on the inert substrate; formation of a polysilicon island on the protection dielectric layer; integration of the active component on the polysilicon island; deposition of the covering dielectric layer on the protection dielectric layer and on the active component; integration of the passive component on the covering dielectric layer; formation of first contact structures in openings realised in the covering dielectric layer in correspondence with active regions of the active component; and formation of second contact structures in correspondence with the passive component. An integrated device obtained through this process is also described.
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申请公布号 |
US2008029816(A1) |
申请公布日期 |
2008.02.07 |
申请号 |
US20070803716 |
申请日期 |
2007.05.14 |
申请人 |
STMICROELECTRONICS S. R. L. |
发明人 |
LEONARDI SALVATORE;COFFA SALVATORE;CALIGIORE CLAUDIA;TRAMONTANA FRANCESCA P. |
分类号 |
H01L27/06;H01L21/00 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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