| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
According to an embodiment, a semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a first insulating layer, and a first insulating region. The second semiconductor region is provided on the first semiconductor region. The first insulating layer is provided around at least a portion of the first semiconductor region and at least a portion of the second semiconductor region. The first insulating layer contacts the second semiconductor region. The first insulating region is provided around at least a portion of the first insulating layer. |
| 申请公布号 |
US2016276430(A1) |
申请公布日期 |
2016.09.22 |
| 申请号 |
US201514846916 |
申请日期 |
2015.09.07 |
| 申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
Okumura Hideki;Tsuchitani Masanobu;Misawa Hiroto;Ezaki Akira;Shiraishi Tatsuya |
| 分类号 |
H01L29/06;H01L29/423;H01L29/739;H01L29/861;H01L29/78 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a first semiconductor region of a first conductivity type; a second semiconductor region of a second conductivity type provided on the first semiconductor region; a first insulating layer provided around at least a portion of the first semiconductor region and at least a portion of the second semiconductor region, the first insulating layer contacting the second semiconductor region; and a first insulating region provided around at least a portion of the first insulating layer. |
| 地址 |
Tokyo JP |
